Talk:Multigate device

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Reads like a press release for every conceivable semiconductor company[edit]

How many industry and corporate references do we need in this article? It is no longer encyclopedic, as everyone has jumped onto this article for advertising. Where to start hacking out the name drops?

Untitled[edit]

Hoping that this article can replace or merge with the too-specific, not-too-well-organized FinFET article Irene Ringworm 19:02, 10 January 2007 (UTC)[reply]

Good article but one extra point could be added[edit]

Hi I really like this article but what a double gate or tri-gate device but there is one point i would like to be added. In the art the terms of double gate and tri-gate are used very confusingly. With double gates sometimes people refers to two gates on each of the sides for a finfet or on top and bottom for a planar double gate connected together so they in effect electrically are just one gate. Likewise a finfet with one wrap-around gate is often times called a tri-gate. When two gates either in a finfet or a planar double gate configuration are separated and individually electrically connected to in effect electrically become a double gate device they are often called independent, separated or split gate devices to clearly distinguish these devices from the non independent types. It seems as others are better at integrating knowledge into the article so I am not going to add this point as of now. I hope others will ad the point otherwise I will try to formulate it to the best of my abilities in march 2007. Landers 16 february 2007 193.88.185.185 13:10, 16 February 2007 (UTC)[reply]

I've got a substantial rewrite in the works that distinguishes between MIGFET (independent gate operation) and MUGFET (wraparound gate). Irene Ringworm 15:48, 16 February 2007 (UTC)[reply]
Not sure what has happened since 2007, but this NOT a good article. The writing could be much improved by following conventional rules of style. The organization is a bigger problem.
My perspective is a preson coming to this page looking for the meaning of finFET. Saying that a finFET is a multigate device is misleading in and of itself. Beginning the discussion by introducing various options for multigate without clarifying any of them aggravates the problem. The main difference between a finFET and a conventional MOSFET is the geometry as opposed to the number of gates or their connectivity. The important thing is the fin, not the number of gates. The point to emphasize is that the fin allows the channel to be acted on from the sides. — Preceding unsigned comment added by 75.10.143.187 (talk) 14:47, 5 December 2012 (UTC)[reply]

Needs to discuss analogue applications[edit]

I'm not the person to do it, as I'm only reading about it now, but dual-gate FETs have been used for a long time in analogue applications (e.g. mixers for superhet radio receivers). This application should be discussed here alongside the more recent digital applications. JulesH (talk) 09:10, 11 February 2012 (UTC)[reply]

[1] could be a useful source for anyone who does decide to do this. JulesH (talk) 09:20, 11 February 2012 (UTC)[reply]
Really, the devices described in this article should be termed multi-channel FET, not multi-gate FET. The dual-gate FET, is, as mentioned above, used in VHF applications. It has two independent gates on a single channel. The device functions as a cascode amp if the gate closest to the drain is kept at a constant potential wrt the source. These devices are fundamentally different. There's even a special symbol for a dual-gate FET. --71.214.208.91 (talk) 17:30, 12 June 2012 (UTC)[reply]

Unclear descriptions[edit]

The descriptions of FinFETs an Trigates seem garbled to me:

FinFET: The distinguishing characteristic of the FinFET is that the conducting channel is wrapped by a thin silicon "fin", which forms the body of the device.
TriGate: These transistors employ a single gate stacked on top of two vertical gates allowing for essentially three times the surface area for electrons to travel.

Shouldn't it be more like:

FinFET: The distinguishing characteristic of the FinFET is that the conducting channel or "fin", which forms the body of the device, is wrapped by a thin silicon gate.
TriGate: These transistors employ a single gate stacked on top of two or more vertical paths between source and drain allowing for essentially three times the surface area for electrons to travel.

--agr (talk) 12:09, 11 December 2012 (UTC)[reply]

No - FinFET 'fin' is the gate not the channel. - Rod57 (talk) 11:06, 23 June 2017 (UTC)[reply]

FinFET vs Trigate?[edit]

What is the difference between a FinFET and a trigate?--Frozenport (talk) 16:09, 24 April 2013 (UTC)[reply]

Looks like Tri-Gate is Intel's type/style of FinFET. eg See [2] - Rod57 (talk) 11:02, 23 June 2017 (UTC)[reply]

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FinFET text and image seem to contradict each other[edit]

The FinFET text seems to conflict with the Doublegate FinFET.PNG image it uses. The image points to the green channel as the fin but the text seems to imply it is the red gate around the channel that is the 'fin'. Also the image is named "Doublegate FinFET" but it only seems to show one (red) gate wrapped over the green channel. - Rod57 (talk) 10:51, 23 June 2017 (UTC)[reply]

Ok, so a few things. The diagram is correct - green channel is the "fin". The text used to have the correct language, until this edit [3] where an anonymous user tried to "correct" the text. The source-drain is the fin. (source here) "In a FinFET, the channel connecting the source and drain is a thin, finlike wall jutting out of the silicon substrate." Unfortunately, Wikipedia gets copied around, and the faulty information has made its way into review papers. I even came across a review paper ("Comparative Study of MOSFET, CMOS and FINFET: A Review", by Prasad M and Dr. U B Mahadevaswamy) which I suspect has content copied off this wiki article including the mistake. "The term “FINFET” describes a non-planar, double gate transistor built on an SOI substrate, based on the single gate transistor design. The important characteristics of FINFET is that the conducting channel is wrapped by a thin Si “fin”".
The "doublegate" is under the assumption that there is a spacer preventing electrical contact the very top of the fin- thus, the left and right sides of the fin are two distinct "gates". Intel's "trigate" abuses the terminology a bit further- is not really 3 different gates, it's a single gate with contact on 3 sides. Forbes72 (talk) 21:44, 17 July 2017 (UTC)[reply]

Split or rename - FinFET and Tri-Gate might not have multiple gates[edit]

FinFET (and Intel's Tri-Gate) should be split out into FinFET as they might not have multiple gates - probably someone thought Tri-Gate mean triple gate (rather than 3-sided gate) - or are there RS for finFETs being considered multigate devices - in which case we should split finFET from MIGFETs ? - Rod57 (talk) 11:46, 23 June 2017 (UTC)[reply]

Agree FinFET should be split out.Daiquping (talk) 13:30, 7 December 2017 (UTC)[reply]

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Discrete versus integrated[edit]

I do not understand where the article treats discrete components and where integrated. May be this can be made clear in the article. Andries (talk) 19:23, 25 September 2022 (UTC)[reply]

Miller effect[edit]

I understood that the Miller effect disappears for a multigate transsitor. Can this be treated? Andries (talk)

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