Draft:Tomás Palacios

From Wikipedia, the free encyclopedia
  • Comment: Please remove the WP:PUFF and focus on WP:NACADEMIC. Otherwise it will probably never be accepted. Ldm1954 (talk) 18:21, 5 November 2023 (UTC)


Tomás Palacios
Palacios pictured in 2024 at MIT
Born1978
Alma mater
Scientific career
FieldsElectronics, compound semiconductors, 2D materials
InstitutionsMassachussetts Institute of Technology
ThesisOptimization of the high frequency performance of nitride-based transistors (2006)
Doctoral advisorUmesh Mishra

Tomás A. Palacios Gutiérrez (born 1978) is a Spanish–American professor and researcher in semiconductor technologies. He holds the chair Clarence J. LeBel Professor of Electrical Engineering and Computer Science at the Massachusetts Institute of Technology[1][2] and serves as director of Microsystems Technology Laboratories (MTL).[3]

Early life and education[edit]

Palacios was born in 1978 in Jaén, Spain.[4][5]

Palacios completed a Bachelor of Science in Telecommunications and Electrical Engineering from the Polytechnic University of Madrid in 2001,[4] followed by a Master of Science in Electrical Engineering from University of California, Santa Barbara in 2004. He then did a doctoral degree there which he defended in 2006,[6] under supervisor Umesh Mishra, with his dissertation titled Optimization of the high frequency performance of nitride-based transistors.[7]

Career[edit]

Soon after finishing his doctorate, Palacios joined the MIT Electrical Engineering and Computer Science Department as an Associate Professor in 2006.[8] Since 1 July 2023, Palacios hold the chair Clarence J. LeBel Professor for "his groundbreaking research, excellent teaching and mentoring, and exceptional contributions to the department and to MIT".[9]

Palacios holds directorships in various centers and programs, including being founding director of the MTL Center for Graphene Devices and 2D Systems and MTL Gallium Nitride (GaN) Energy Initiative (MIT-GaN);[10][11] Associate Director of SUPeRior Energy-efficient Materials and dEvices (SUPREME) Center;[12][13] coordinator of 6A Masters in Engineering (6A M.Eng.) program from 2015–2023;[14] fellow of the Fundacion Gadea;[15] IEEE Fellow;[8] general chair and executive committee member for the 2022 IEEE Symposium on Very Large-Scale Integration Technology (VLSI) and Circuits.[16]

Research[edit]

Palacios's research focuses on studying new materials and device architectures, especially those based on 2D materials and compound semiconductors, for applications in electronics, optoelectronics, telecommunications and other fields of technology.[17][18] The work on novel structures includes new types of FinFET geometries like vertical GaN-on-Si that would be potentially more power efficient and could be used in power electronics applications.[19][20]

Commercialization[edit]

Palacios and collaborators have taken steps to commercialize some of the research. This includes via the company Finwave Semiconductor Inc. [d] of which Palacios is a co-founder.[21]

Honors and awards[edit]

Palacios has received multiple awards and honors. Some are listed below.

References[edit]

  1. ^ "Bio : Tomás Palacios". tpalacios.mit.edu.
  2. ^ "MIT EECS People : Tomás Palacios". eecs.mit.edu.
  3. ^ Melvin, Meghan; Halpern, Jane (14 December 2022). "Tomás Palacios named new Director of the Microsystems Technology Laboratories (MTL)". MIT EECS. Retrieved 21 January 2024.
  4. ^ a b Bourzac, Katherine (28 August 2017). "Electrical engineer wants to use 2-D materials to wrap buildings and make synthetic cells". Chemical & Engineering News. Retrieved 21 January 2024.
  5. ^ Robles, Feliciano (21 July 2020). "TOMÁS PALACIOS GUTIÉRREZ". jiennensesilustres.blogspot.com. Retrieved 19 January 2024.
  6. ^ "IEEE Electron Devices Society Newsletter" (PDF). IEEE Electron Devices Society Newsletter October 2020: 14. 2020.
  7. ^ Palacios Gutierrez, Tomas A. (2006). Optimization of the high frequency performance of nitride-based transistors (PhD thesis). Santa Barbara, California: University of California, Santa Barbara. ISBN 978-0-542-53511-6. OCLC 759566429.
  8. ^ a b "IEEE Fellow Tomas Palacios".
  9. ^ Halpern, Jane (15 June 2023). "Palacios named the Clarence J. LeBel Professor". eecs.mit.edu.
  10. ^ "MTL/MIT Graphene Center". MIT-MTL Center for Graphene Devices and 2D Systems.
  11. ^ "MIT/MTL Gallium Nitride (GaN) Energy Initiative". MIT/MTL Gallium Nitride (GaN) Energy Initiative (MIT-GaN).
  12. ^ "Cornell to lead SRC-sponsored SUPREME research center". Semiconductor Today.
  13. ^ "Palacios named Associate Director of new semiconductor research center; Jing Kong, Farnaz Niroui, Luqiao Liu, and Bilge Yildiz to act as PI's". MIT EECS.
  14. ^ Hinkel, Lauren (4 March 2022). "Unlocking new doors to artificial intelligence - MEng graduate students engage with IBM to develop their research skills and solutions to real-world problems". MIT News. Retrieved 3 March 2024.
  15. ^ "Palacios, Tomás". FUNDACIÓN GADEA CIENCIA. 26 January 2023.
  16. ^ "About – 2022 IEEE Symposium on VLSI Technology & Circuits".
  17. ^ Sample, Ian (28 January 2019). "Scientists create super-thin 'sheet' that could charge our phones". The Guardian. Retrieved 1 February 2024.
  18. ^ Zeeberg, Amos (7 January 2020). "The Superpowers of Super-Thin Materials". The New York Times. Retrieved 1 February 2024.
  19. ^ Prof. Tomás Palacios (MIT) on Vertical GaN-on-Si. DESIGN&ELEKTRONIK. 28 May 2020.
  20. ^ "Tomás Palacios Research Group". tpalacios.mit.edu.
  21. ^ "Finwave - The team". Retrieved 1 February 2024.
  22. ^ "Intel's 2020 Outstanding Researcher Awards Recognize 18 Academic Researchers". intel.com. 2020. Retrieved 3 March 2024.
  23. ^ "Palacios wins PECASE award - Among 94 young researchers from across the country honored". MIT News. 27 September 2011. Retrieved 3 March 2024.
  24. ^ "George E. Smith Award". eds.ieee.org. Electron Device Letters. Retrieved 3 March 2024.

External links[edit]