Transistor diode model: Difference between revisions
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In a '''diode model''' two [[diode]]s are back-to-back connected to make a PNP or NPN [[bipolar junction transistor]] (BJT) equivalent. This model is theoretical and qualitative. |
In a '''diode model''' two [[diode]]s are back-to-back connected to make a PNP or NPN [[bipolar junction transistor]] (BJT) equivalent. This model is theoretical and qualitative. |
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Revision as of 10:11, 31 May 2020
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In a diode model two diodes are back-to-back connected to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative.
Examples
NPN transistor
To make an NPN transistor, the anodes of both diodes are back-to-back connected to form a large P type base region. Example : If we are using the CE configuration then between Base and Emitter diode will be represented and between the base and collector dependent current source because collector current (Ic) is some constant times the base current(Ib).
PNP transistor
To make a PNP transistor, the cathodes of both diodes are back-to-back connected to form a large N type base region.
Base biasing
As the base region is a combination of two anodes or two cathodes, and is not lightly doped, more base biasing is required for making this model operational.
References
External links
- https://en.wikiversity.org/wiki/Electronic_Circuits/Introduction_to_the_simple_diode_npn_model
- https://www.st-andrews.ac.uk/~www_pa/Scots_Guide/info/comp/active/BiPolar/page1.html
- https://www.st-andrews.ac.uk/~www_pa/Scots_Guide/info/comp/active/BiPolar/dtob.gif
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